Carbon nanotube bumps for the flip chip packaging system.

Content Provider	Europe PMC
Author	Yap, Chin Chong Brun, Christophe Tan, Dunlin Li, Hong Teo, Edwin Hang Tong Baillargeat, Dominique Tay, Beng Kang
Copyright Year	2012
Abstract	Carbon nanotube [CNT] interconnection bump joining methodology has been successfully demonstrated using flip chip test structures with bump pitches smaller than 150 μm. In this study, plasma-enhanced chemical vapor deposition approach is used to grow the CNT bumps onto the Au metallization lines. The CNT bumps on the die substrate are then 'inserted' into the CNT bumps on the carrier substrate to form the electrical connections (interconnection bumps) between each other. The mechanical strength and the concept of reworkable capabilities of the CNT interconnection bumps are investigated. Preliminary electrical characteristics show a linear relationship between current and voltage, suggesting that ohmic contacts are attained.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3338392
Issue Number	1
PubMed reference number	22313721
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-105
Language	English
Publisher	Springer
Publisher Date	2012-02-07
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Yap et al; licensee Springer.
Subject Keyword	CNT bumps interconnects flip chip packaging
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science