A general lithography-free method of microscale/nanoscale fabrication and patterning on Si and Ge surfaces.

Content Provider	Europe PMC
Author	Wang, Huatao Wu, Tom
Copyright Year	2012
Abstract	Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3305425
Issue Number	1
PubMed reference number	22315969
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-110
Language	English
Publisher	Springer
Publisher Date	2012-02-08
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Wang and Wu; licensee Springer.
Subject Keyword	lithography-free patterning nanostructures pits silicides germanides
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science