Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces.

Content Provider	Europe PMC
Author	Li, Li-Gong Liu, Shu-Man Luo, Shuai Yang, Tao Wang, Li-Jun Liu, Feng-Qi Ye, Xiao-Ling Xu, Bo Wang, Zhan-Guo
Copyright Year	2012
Abstract	InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized.PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3305404
Issue Number	1
PubMed reference number	22373387
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-160
Language	English
Publisher	Springer
Publisher Date	2012-02-28
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Li et al; licensee Springer.
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science