Metal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC.

Content Provider	Europe PMC
Author	Kang, Min-Seok Ahn, Jung-Joon Moon, Kyoung-Sook Koo, Sang-Mo
Copyright Year	2012
Abstract	Metal, typically gold [Au], nanoparticles [NPs] embedded in a capping metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original contacts. Here, we demonstrate the use of silver [Ag] NPs to effectively lower the barrier height of the electrical contacts to 4H-SiC. It has been shown that the barrier height of the fabricated SiC diode structures (Ni with embedded Ag-NPs) has significantly reduced by 0.11 eV and 0.18 eV with respect to the samples with Au-NPs and the reference samples, respectively. The experimental results have also been compared with both an analytic model based on Tung's theory and physics-based two-dimensional numerical simulations.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	7
PubMed Central reference number	PMC3285043
Issue Number	1
PubMed reference number	22244310
e-ISSN	1556276X
DOI	10.1186/1556-276x-7-75
Language	English
Publisher	Springer
Publisher Date	2012-01-13
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2012 Kang et al; licensee Springer.
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science