Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.

Content Provider	Europe PMC
Author	Zhang, Yang Guan, Min Liu, Xingfang Zeng, Yiping
Copyright Year	2011
Abstract	The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.
ISSN	19317573
Journal	Nanoscale Research Letters
Volume Number	6
PubMed Central reference number	PMC3238496
Issue Number	1
PubMed reference number	22112249
e-ISSN	1556276X
DOI	10.1186/1556-276x-6-603
Language	English
Publisher	Springer
Publisher Date	2011-11-23
Access Restriction	Open
Rights License	This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copyright ©2011 Zhang et al; licensee Springer.
Subject Keyword	resonant tunneling diode I-V characteristics molecular beam epitaxy
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics Materials Science