NDLI: Temperature-dependent electrical conduction in porous silicon: Non-Arrhenius behavior

Content Provider	EDP Sciences
Author	F. G. Shi K. Okuyama
Abstract	A model for the temperature dependence of electrical conduction in a porous silicon (PS) layer is introduced based on the consideration that the onset of electrical conduction is dependent on the formation of a continuous network of conducting sites extending the entire thickness of a PS layer. At an arbitrary temperature, a PS layer consists of both unblocked and blocked sites (blocking energies are larger than thermal fluctuation energy). The fraction of unblocked sites increases with temperature. At low temperatures () a PS layer is mainly dominated by a continuous network of blocked sites, while discrete unblocked sites do not form any continuous network extending the entire thickness of a PS layer. At medium temperatures () both continuous networks of unblocked and blocked sites appear in a PS layer. And at higher temperatures (), a PS layer is mainly dominated by a continuous network of unblocked sites, while discrete blocked sites do not form any continuous network extending the entire thickness of a PS layer. Contrary to the prevalent views, the overall temperature dependence of the electrical conductivity of a PS is not always Arrhenius: it obeys a Vogel-Tammann-Fulcher (VTF) law at , becomes insulating at , and exhibits the Arrhenius behavior only for . Both T_{1_{and T_{2_{are found to increase with the decrease silicon nanocrytallites sizes. The VTF behavior was derived using the mean-field approximation for Ising model and found to agree with experimental evidences.}}}}
Ending Page	240
Starting Page	234
Page Count	7
File Format	HTM / HTML PDF
ISSN	02955075
Alternate Webpage(s)	https://epljournal.edpsciences.org/articles/epl/abs/2001/08/6499/6499.html
e-ISSN	12864854
Issue Number	2
Journal	Europhysics Letters
Volume Number	54
DOI	10.1209/epl/i2001-00300-9
Language	English
Publisher	EDP Sciences
Publisher Date	2001-04-01
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	© EDP Sciences, 2001
Subject Keyword	Electronic transport in mesoscopic systems Electronic transport phenomena in thin films Nanocrystalline materials
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Investigation of polycrystalline ferroelectric tunnel junction

Theoretical model for negative giant magnetoresistance in ultrahigh-mobility 2D electron systems

Negative deviations from Matthiessen's rule for and

Grain boundary resistivities of polycrystalline Au films

Radiation-induced re-emission in a 2D electron system

PECVD nanocrystalline silicon films versus porous silicon: Structural and optical properties

Electrical conduction mechanism in nanocrystalline CdTe (nc-CdTe) thin films

Tuneable anisotropic transport in nitrogen-doped nanocrystalline diamond films: Evidence of a graphite-diamond hybrid superlattice

Cathodoluminescence from nanocrystalline silicon films and porous silicon

Temperature-dependent electrical conduction in porous silicon: Non-Arrhenius behavior

Similar Documents

Investigation of polycrystalline ferroelectric tunnel junction

Theoretical model for negative giant magnetoresistance in ultrahigh-mobility 2D electron systems

Negative deviations from Matthiessen's rule for and

Grain boundary resistivities of polycrystalline Au films

Radiation-induced re-emission in a 2D electron system

PECVD nanocrystalline silicon films versus porous silicon: Structural and optical properties

Electrical conduction mechanism in nanocrystalline CdTe (nc-CdTe) thin films

Tuneable anisotropic transport in nitrogen-doped nanocrystalline diamond films: Evidence of a graphite-diamond hybrid superlattice

Cathodoluminescence from nanocrystalline silicon films and porous silicon

Temperature-dependent electrical conduction in porous silicon: Non-Arrhenius behavior