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| Content Provider | EDP Sciences |
|---|---|
| Author | J. Bernard R. Lancon C. Paparoditis M. Rodot |
| Abstract | A method derived from that of Cusano [1] has been used to prepare CdTe photocells, with either single crystal or thin film CdTe. The method includes depositing a high resistance CdTe film and then a film of copper telluride obtained by flash evaporation. Electrical and optical properties of copper telluride are given as a function of copper content near Cu2Te. Electrical and photoelectric properties of the cells have been measured, including diode characteristics and capacity C as a function of temperature, spectral response and temperature dependence of the photovoltaic signal and the photovoltaic I - V characteristic. From the facts that Cu2Te is highly degenerate, that C(V) follows a V-1/3 law, that the barrier is as high as 1.0 to 1.3 eV, that the copper acceptor levels in CdTe are responsible for inverse current generated in the space-charge region and that the thresholds for absorption and for the photovoltaic effect coincide, it is deduced that a representation of the cell as a CdTe p-n junction is in agreement with experience. The best efficiency of the single crystal cell as a solar converter was 5 %, and other cells have been used as α - particle detectors [2]. |
| Ending Page | 216 |
| Starting Page | 211 |
| Page Count | 6 |
| File Format | HTM / HTML PDF |
| ISSN | 00351687 |
| Alternate Webpage(s) | http://dx.doi.org/10.1051/rphysap:0196600103021100 |
| Issue Number | 3 |
| Journal | Revue de Physique Appliquée |
| Volume Number | 1 |
| DOI | 10.1051/rphysap:0196600103021100 |
| Language | French |
| Publisher | Société Française de Physique |
| Publisher Date | 1966-09-01 |
| Access Restriction | Subscribed |
| Content Type | Text |
| Resource Type | Article |
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