NDLI: Conductive-probe atomic force microscopy characterization of silicon nanowire

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Conductive-probe atomic force microscopy characterization of silicon nanowire

Content Provider	Directory of Open Access Journals (DOAJ)
Author	Yu Linwei Cabarrocas Pere Perraud Simon Rouvière Emmanuelle Celle Caroline Mouchet Céline Simonato Jean-Pierre Alvarez José Ngo Irène Gueunier-Farret Marie-Estelle Kleider Jean-Paul
Abstract	Abstract The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated.
Related Links	http://www.nanoscalereslett.com/content/6/1/110
ISSN	19317573
e-ISSN	1556276X
Journal	Nanoscale Research Letters
Issue Number	1
Volume Number	6
Language	English
Publisher	SpringerOpen
Publisher Date	2011-01-01
Publisher Place	United Kingdom
Access Restriction	Open
Subject Keyword	Materials of Engineering and Construction. Mechanics of Materials
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Condensed Matter Physics

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