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Impact of Self-Heating Effect on Hot Carrier Degradation in High-Voltage LDMOS
| Content Provider | CiteSeerX |
|---|---|
| Author | Cheng, Chih-Chang Lin, J. F. Wang, Tahui |
| Abstract | Abstract The device was processed in a 0.18tm CMOS technology with a gate oxide thickness of 100nm and a channel length of Self-heating induced transient hot carrier effects in high- 3m.TeorainvlgsaeVgOVndV4V.o3utm. The operation voltages are Vg=40V and Vd=40V. Tovoltage n-LDMOS are investigated. A novel LDMOS eliminate SUE in measurement, a fast transient measurement structure incorporating a metal contact in the bird's beak ' region is fabricated, which allows us to probe an internal stLincudring audiita oilloscopedis0built, asshwnirFg ^ ~~~~~~~~~~2.ear drain c rrent |
| File Format | |
| Access Restriction | Open |
| Content Type | Text |