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Charge Offset Stability in Si Single Electron Devices with Al Gates (2014)
| Content Provider | CiteSeerX |
|---|---|
| Author | Zimmerman, Neil M. Yang, Chih-Hwan Lai, Nai Shyan Lim, Wee Han Dzurak, Andrew S. |
| Abstract | We report on the charge offset drift (time stability) in Si single elec-tron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 e) is intermediate between that of Al/AlOx/Al tunnel junctions (greater than 1 e) and Si SEDs defined with Si gates (0.01 e). This range of values suggests that defects in the AlOx are the main cause of the charge offset drift instability. ar |
| File Format | |
| Publisher Date | 2014-01-01 |
| Access Restriction | Open |
| Content Type | Text |