Loading...
Please wait, while we are loading the content...
Electron-Beam-Induced Current Study of Breakdown Behavior of High-K
| Content Provider | CiteSeerX |
|---|---|
| Author | Mosfets, Gate Chen, Jun Takase, Masami Sekiguchi, Takashi Sato, Motoyuki Toyohiro Chikyo, I. Fukata, Naoki Yamabe, Kikuo Yamada, Keisaku |
| Abstract | Abstract. We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Stress-induced Defect Time-dependent Dielectric Breakdown Electrical Stress Microscopic Investigation Electron-beam-induced Current Study Ebic Imaging Different Gate Electrode High-k Gate Dielectric Electron Trapping Defect Pre-existing Defect Breakdown Behavior Breakdown Site Oxygen Vacancy Model |
| Content Type | Text |
| Resource Type | Article |
