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CHARACTERIZATION OF SILICON NANOWIRES PREPARED BY THERMAL EVAPORATION USING AuPd CATALYST
| Content Provider | CiteSeerX |
|---|---|
| Author | Azam, Mohd Adnan, Mohd Hutagalung, Sabar D. Cheong, K. Y. |
| Abstract | Silicon nanowires were synthesized on Si substrates (111) via thermal evaporation using AuPd thin layer catalyst. Pre cleaned of Si wafer was used as a substrate to assemble the nanostructure products. In this work, the effect of growth temperature that ranging from 800 to 1000 oC on the formation of silicon nanowires studied extensively. X-ray diffraction and field emission scanning electron microscope were employed to characterize the structures and morphology of nanowires. Vertical aligned silicon nanowires have been successfully grown on Si substrates at 900 and 1000 oC. At 1100 oC, the high aspect ratio of silicon nanowires can be produced but the formation density is low. The presence of AuPd catalyst on the tip of nanowires, it is expected that VLS is the most suitable to explain the growth mechanism of obtained SiNWs. The crystalline structure of SiNWs was proved by XRD data. ABSTRAK |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Silicon Nanowires Si Substrate Thermal Evaporation X-ray Diffraction Aupd Catalyst Formation Density Nanostructure Product Growth Mechanism High Aspect Ratio Field Emission Crystalline Structure Xrd Data Aupd Thin Layer Catalyst Si Wafer Growth Temperature |
| Content Type | Text |
