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EFFECT OF MAJORITY CARRIER CURRENT ON THE BASE TRANSIT TIME OF A BJT 1
| Content Provider | CiteSeerX |
|---|---|
| Author | Hassan, M. M. Shahidul Hassan, Orchi Iqbal Chowdhury, Bahar |
| Abstract | The main objective of this paper is to show that majority carrier current needs to be taken into account in determining base transit time B of a bipolar junction transistor (BJT). In previous analytical works for B, majority carrier current in the base was neglected. In this paper both drift and diffusion currents for electrons and holes are considered in obtaining minority carrier profile n(x) within the p-type base. In the model, it is assumed that the lateral injection of base current into the active base region is occurred from a source function, g. The energy-bandgap narrowing effects due to heavy doping, velocity saturation as well as doping dependent mobility are considered. The analytical expression for B reduces to the well known form for uniformly doped base when g is zero. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Majority Carrier Uniformly Doped Base Diffusion Current Analytical Expression Base Transit Time Dependent Mobility P-type Base Minority Carrier Profile Previous Analytical Work Heavy Doping Velocity Saturation Lateral Injection Main Objective Active Base Region Source Function Bipolar Junction Transistor Energy-bandgap Narrowing Effect |
| Content Type | Text |
| Resource Type | Article |
