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Conductive filament
| Content Provider | CiteSeerX |
|---|---|
| Abstract | no n. W n b ive co con y (RRA s one o olatile e-swit s and errite ( nonpolar resistive switching in Mn-doped BFO thin films deposited on Pt/Ti/SiO2/Si substrates, which is attributed to the valence change between Fe3+ and Fe2+ due to the neutralization and ioniza-tion of oxygen vacancies (OVs); Chen et al. [7] explained the RS 2. Experimental BFO thin films were deposited on ITO/glass substrates by the sol–gel Bi(NO3)35H2O and Fe(NO3)39H2O were used to prepare the precursor solution. The BFO solution was spin-coated and dried for several times under the same conditions, and then annealed in air at 600 C for 30 min. The structure of films was analyzed by X-ray diffraction (XRD, D-MAX 2200VPC), the cross-section mor-phology was examined with scanning electron microscopy (SEM, Quanta 400F), and the surface morphology was characterized using a scanning probe microscope (SPM, CSPM5500). After Pt top electrodes deposited on the films with a diameter of 0.3 mm, the current–voltage curves were measured by a semiconductor character- |
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| Access Restriction | Open |
| Subject Keyword | Conductive Filament Sol Gel Bi Oxygen Vacancy Experimental Bfo Thin Film Pt Top Electrode Ito Glass Substrate Ive Co Con Mn-doped Bfo Thin Film Valence Change Cross-section Mor-phology Bfo Solution Precursor Solution Nonpolar Resistive Switching Semiconductor Character Probe Microscope Pt Ti Sio2 Si Substrate Current Voltage Curve |
| Content Type | Text |