Small-angle x-ray scattering study of the microstructure of highly porous silicon.

Content Provider	CiteSeerX
Author	Naudon, A. Goudeau, Ph. Halimaoui, A. Bomchil, G.
Abstract	Small-Angle X-ray Scatterin is well suited to the study of porous silicon microstructure since the pore radii range (2-10-5 corresponds to the small-angle scattering range (1-100 nm). In all the studies realized till now, the porous silicon layers were always supported by the substrate. Recently, it has been possible to detach the porous silicon layer from the substrate. We performed small-angle X-ray scattering measurements, on such P-type samples, at a synchrotron radiation source. Close to the origin, the scattering pattern shows an anisotro ic behaviour when tilting the sample surface with respect to the X-ray beam. This anisotropy is di ferent from the one observed previously in the case of P+ samples. P
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Subject Keyword	Porous Silicon Small-angle X-ray Scattering Study Porous Silicon Layer Porous Silicon Microstructure Di Ferent P-type Sample Synchrotron Radiation Source X-ray Beam Small-angle Scattering Range 2-10-5 Corresponds Small-angle X-ray Scattering Measurement Sample Surface Small-angle X-ray Scatterin Anisotro Ic Behaviour Pore Radius Range 1-100 Nm Scattering Pattern
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