NDLI: Silicon carbide power device characterization for hevs.

Content Provider	CiteSeerX
Author	Ozpineci, Burak Tolbert, Leon M. Islam, Syed K.
Abstract	Abstract: The emergence of silicon carbide- (SiC-) based power semiconductor switches, with their superior features compared with silicon- (Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications such as a hybrid electric vehicle (HEV) traction drive. More research is required to show the impact of SiC devices in power conversion systems. In this study, findings of SiC research at Oak Ridge National Laboratory (ORNL), including SiC device design and system modeling studies, are discussed. I.
File Format	PDF
Access Restriction	Open
Subject Keyword	Silicon Carbide Power Device Characterization Oak Ridge National Laboratory Power Semiconductor Switch High-voltage Power Electronics Application Sic Power Device Power Conversion System Hybrid Electric Vehicle Sic Device Superior Feature Silicon Carbide Sic Device Design Substantial Improvement Sic Research Traction Drive Power Electronics Converter System
Content Type	Text
Resource Type	Article

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