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A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS (2005)
| Content Provider | CiteSeerX |
|---|---|
| Author | Linten, Dimitri Thijs, Steven Natarajan, Mahadeva Iyer Wambacq, Piet Jeamsaksiri, Wutthinan Ramos, Javier Mercha, Abdelkarim Jenei, Snezana Donnay, Stéphane Decoutere, Stefaan |
| File Format | |
| Language | English |
| Publisher Date | 2005-01-01 |
| Publisher Institution | University of Calgary |
| Access Restriction | Open |
| Subject Keyword | Esd Protection Low Noise Amplifier 3-db Power Gain Rf Cmos Input Return Loss Radio Frequency Suffi-cient Esd Protection Original Lna Design Bi-directional Esd Protection Device Transmission Line Pulse 2-kv Human Body Model Esd Protection Level Noise Figure 90-nm Rf Cmos Technology 7-mw Lna Index Term Cmos Integrated Esd-protected Low-noise Amplifier Electrostatic Discharge On-chip Inductor Rf Pin Reference Lna Experimental Result Minor Rf Performance Degradation |
| Content Type | Text |
| Resource Type | Article |
