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Ranueing ol l>volluese.mfisfets on1 ills izawiapbav c itio l) uiitay c"lil paralleling of low-voltage mosfets operating in avalanche conditions.
| Content Provider | CiteSeerX |
|---|---|
| Author | Buttay, Cyril Brevet, Olivier Allard, Bruno Bergogne, Dominique Morel, Herv |
| Abstract | This paper addresses the behavior of low voltage MOSFETs uLnder breakdown avalanche operation. The phenomena leading to avalanche operation of the MOSFET transistors in automotive applications are first presented. Then, after a brief description of the model and of the experimental identification of its parameters, electrothermal simulations are performed. A special focus is given to the curmrnt balance between paralleled MOSFETs, because in this case breakdown voltage mismatches are a well-known reliability issue. These simulations demonstrate the influence of the specific avalanche path resistance on current sharing. Calculations perfonned using the proposed model give results far less pessimistic (lower temperature rise on the most stressed transistor) than classical temperature-dependant-only avalanche models. This avoids expensive specifications narrowing when designing for mass-market applications (where wide manufacturing dispersions occur). 1 |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Avalanche Condition Low-voltage Mosfets Operating Ranueing Ol Volluese Mfisfets On1 Ill Izawiapbav Itio Experimental Identification Temperature Rise Mosfet Transistor Low Voltage Mosfets Classical Temperature-dependant-only Avalanche Model Stressed Transistor Wide Manufacturing Dispersion Special Focus Expensive Specification Current Sharing Case Breakdown Voltage Mismatch Electrothermal Simulation Specific Avalanche Path Resistance Curmrnt Balance Mass-market Application Brief Description Automotive Application Breakdown Avalanche Operation Model Give Result Well-known Reliability Issue |
| Content Type | Text |
| Resource Type | Article |
