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Temperature dependence of current–voltage characteristics of au/n-gaas epitaxial schottky dio e (2000).
| Content Provider | CiteSeerX |
|---|---|
| Author | Singh, R. Arora, S. K. Tyagi, Renu Agarwal, S. K. Kanjilal, D. |
| Abstract | Abstract. The influence of temperature on current–voltage (I–V) characteristics of Au/n-GaAs Schottky diode formed on n-GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 × 1016 cm-3. The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80-30 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metal–semiconductor interface. |
| File Format | |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Au N-gaas Epitaxial Schottky Dio Current Voltage Characteristic Temperature Dependence Schottky Barrier Height Ideality Factor Metal Semiconductor Interface Metal Organic Chemical Apparent Schottky Barrier Height Nanometer Scale Length N-gaas Epitaxial Layer Epitaxial Layer Dopant Concentration Breakdown Voltage Range 80-30 Various Parameter Current Voltage Lateral Inhomogeneity Deposition Technique Au N-gaas Schottky Diode |
| Content Type | Text |
| Resource Type | Article |
