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Carrier transport in ultra-thin nano/polycrystalline silicon films and nanowires.
| Content Provider | CiteSeerX |
|---|---|
| Author | Kamiya, Toshio Tan, Yong T. Furuta, Yoshikazu Mizuta, Hiroshi Durrani, Zahid A. K. |
| Abstract | Carrier transport was investigated in two different types of ultra-thin silicon films, polycrystalline silicon (poly-Si) films with large grains> 20 nm in size and hydrogenated nanocrystalline silicon (nc-Si:H) films with grains 4 nm – 8 nm in size. It was found that there were local non-uniformities in grain boundary potential barriers in both types of films. Single-electron charging effects were observed in 30 nm × 30 nm nanowires fabricated in 30 nm-thick nc-Si:H films, where the electrons were confined in crystalline silicon grains encapsulated by amorphous silicon. In contrast, the poly-Si nanowires of similar dimensions showed thermionic emission over the grain boundary potential barriers formed by carrier trapping in grain boundary defects. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Carrier Transport Ultra-thin Nano Polycrystalline Silicon Film Grain Boundary Potential Barrier Amorphous Silicon Local Non-uniformities Different Type Large Grain Grain Boundary Defect Ultra-thin Silicon Film Polycrystalline Silicon Nanocrystalline Silicon Similar Dimension Nm Nanowires Thermionic Emission Crystalline Silicon Grain Poly-si Nanowires |
| Content Type | Text |
