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High-mobility nanotube transistor memory (2002)
| Content Provider | CiteSeerX |
|---|---|
| Author | Fuhrer, M. S. Kim, B. M. Durkop, T. Brintlinger, T. |
| Abstract | A high-mobility (9000 cm2/Vâs) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of the nanotube transistor allows the observation of discrete configurations of charge corresponding to rearrangement of a single or few electrons. These states may be reversibly written, read, and erased at temperatures up to 100 K. Decreasing the power required to write and erase memory devices requires either a reduction of the write voltage or a reduction in the number of electrons representing one bit. The former is fundamentally limited by the thermal energy at room temperature, and efforts have focused on the latter. The ultimate reduction, i.e., the storage of a single electronic charge, offers advantages over storing quasi-continuous quantities of charge:1 the Coulomb energy associated with adding additional charges to the storage node can be used |
| File Format | |
| Journal | Nano Lett |
| Language | English |
| Publisher Date | 2002-01-01 |
| Access Restriction | Open |
| Subject Keyword | High-mobility Nanotube Transistor Memory Room Temperature Memory Device Single Electronic Charge Ultimate Reduction Quasi-continuous Quantity High Mobility Silicon Dioxide Dielectric Discrete Configuration Nonvolatile Charge-storage Memory Element Nanotube Transistor Storage Node Thermal Energy Write Voltage Nanotube Field-effect Transistor Threshold Shift Silicon Substrate Additional Charge Coulomb Energy Single-walled Nanotube Transistor |
| Content Type | Text |
| Resource Type | Article |
