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Chemical-mechanical planarization of an su-8/copper combination for mems.
| Content Provider | CiteSeerX |
|---|---|
| Author | Gatzen, Hans H. Morsbach, Caspar Kourouklis, Christos |
| Abstract | Abstract: Chemical-mechanical polishing (CMP) is a technology for wafer level planarization. Typically, CMP is applied to a wafer with two different materials at its surface, balancing the difference in material properties by an appropriate mix of mechanical machining and chemical attack. This paper investigates the application of CMP for planarizing electroplated copper (Cu) embedded in a photosensitive epoxy material, which can be patterned by means of photolithography (SU-8). Such a material combination is very advantageous for fabricating electromagnetic Micro Electro-mechanical Systems (MEMS). The goal was to achieve an optimal local planarization, i.e. a minimal step height between the two materials within each structure. Some of the key parameters influencing it were optimized. The parameters investigated to achieve an optimal local planarization were the pad hardness, the baking temperature (“hard bake”) of the SU-8 which affects the material’s hardness, and the density of the structures. 1. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Chemical-mechanical Planarization Su-8 Copper Combination Optimal Local Planarization Chemical Attack Material Hardness Mechanical Machining Material Combination Pad Hardness Chemical-mechanical Polishing Key Parameter Hard Bake Appropriate Mix Minimal Step Height Electromagnetic Micro Electro-mechanical System Level Planarization Material Property Different Material Baking Temperature Photosensitive Epoxy Material |
| Content Type | Text |
| Resource Type | Article |
