Loading...
Please wait, while we are loading the content...
Similar Documents
Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields (1999).
| Content Provider | CiteSeerX |
|---|---|
| Author | Passeri, D. Scorzoni, A. Ciampolini, P. Bilei, G. M. |
| Abstract | In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects and thus minimizing breakdown risks. Presented at IEEE Nuclear Science Symposium, Seattle, WA (U.S.A.), October 24-30, 1999 Submitted to IEEE Transactions on Nuclear Science 1 Introduction Silicon microstrip detectors are being widely used within vertex detectors used in High Energy Physics (HEP) experiments: their exploitation in future, high-luminosity colliders, however, requires some issues concerning radiation hardness to be carefull... |
| File Format | |
| Publisher Date | 1999-01-01 |
| Access Restriction | Open |
| Subject Keyword | Critical Electric Field Silicon Microstrip Detector Electrode Geometry Physical Modeling High Energy Physic High-luminosity Collider Early Micro-discharges Ac-coupled Silicon Microstrip Detector Breakdown Risk Electric Field Distribution Main Geometrical Parameter Computer-based Analysis Nuclear Science Cad Tool Breakdown Phenomenon Actual Field Distribution Ieee Nuclear Science Symposium Vertex Detector Critical Effect Ieee Transaction Metal Strip Positive Impact Critical Region Radiation Hardness Corner Effect Introduction Silicon Microstrip Detector |
| Content Type | Text |
