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Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization (1998)
| Content Provider | CiteSeerX |
|---|---|
| Author | Wong, S. Simon Loke, Alvin L. S. Ryu, Changsup Lee, Won-Jun Wetzel, Jeffrey T. |
| Abstract | This paper reports the drift of Cu ions in various low-permittivity polymer dielectrics to identify Cu barrier requirements for future ULSI integration. Bias-temperature stressing was conducted on Cu-insulator-semiconductor capacitors to investigate Cu + penetration into the polymers. Our study shows that Cu + ions drift readily into poly(arylene ether) and fluorinated polyimide, but much more slowly into benzocyclobutene. A thin nitride cap layer can stop the drift. A physical model has been developed to explain the kinetics of Cu + drift. Introduction Cu wiring has recently been demonstrated as a manufacturable metallization technology [1], [2]. This milestone has intensified the interest to integrate Cu with low-permittivity (low-K ) polymer dielectrics. With existing backend oxide dielectrics, reliable integration requires Cu to be encapsulated with barrier materials since Cu + ions can rapidly drift through oxide dielectrics to degrade field isolation, induce dielectric ... |
| File Format | |
| Publisher Date | 1998-01-01 |
| Access Restriction | Open |
| Subject Keyword | Cu-insulator-semiconductor Capacitor Cu Barrier Requirement Cu Penetration Copper Drift Polymer Dielectric Reliable Integration Bias-temperature Stressing Cu Drift Cu Ion Backend Oxide Dielectric Low-k Polymer Dielectric Physical Model Barrier Material Manufacturable Metallization Technology Thin Nitride Cap Layer Ulsi Metallization Future Ulsi Integration Introduction Cu Wiring Various Low-permittivity Polymer Dielectric Field Isolation Oxide Dielectric |
| Content Type | Text |
| Resource Type | Article |
