NDLI: High temperature crystallized poly-si on molybdenum substrates for thin film transistor application.

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High temperature crystallized poly-si on molybdenum substrates for thin film transistor application.

Content Provider	CiteSeerX
Author	Park, Joong Hyun Kim, Do Young Ko, Jae Kyung Yi, Junsin
Abstract	Abstract. Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently in the future high-resolution, high-performance flat panel display technology. However, it is difficult to fabricate high performance poly-Si TFTs at temperatures lower than 300°C and the temperature of the process is limited to less than 600°C on glass. This paper describes a high temperature process above 750°C to obtain poly-Si films. Hydrogenated amorphous silicon (a-Si:H) layer was deposited on a flexible Mo metal substrate and crystallized by rapid thermal annealing. The a-Si:H films were crystallized at various temperatures between 750°C to 1050°C. The high temperature annealed poly-Si films illustrated field effect mobilities higher than 67 cm 2 /Vs. The poly-Si TFT showed an improved Ion/Ioff ratio of 10 6, reduced gate threshold voltage, and a field effect mobility increased by three orders. In this paper, we introduce the new TFTs process on a flexible substrate a very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si TFT on Mo substrate.
File Format	PDF
Access Restriction	Open
Subject Keyword	High Temperature Poly-si Tft Poly-si Film Field Effect Field Effect Mobility Future High-resolution Poly-si Tfts New Tfts Process Rapid Thermal Annealing High Performance Poly-si Tfts High-performance Flat Panel Display Technology Flexible Mo Metal Substrate Amorphous Silicon Promising Roll-to-roll Process Improved Ion Ioff Ratio Flexible Substrate Gate Threshold Voltage Polycrystalline Silicon Thin Film Transistor Various Temperature Wide Variety High Temperature Process Mo Substrate
Content Type	Text
Resource Type	Article

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