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120 atomistic simulations of flash memory materials based on chalcogenide glasses.
| Content Provider | CiteSeerX |
|---|---|
| Author | Cai, Bin Prasai, Binay Drabold, D. A. |
| Abstract | In the last decade, the market for non-volatile computer storage has experienced rapid growth. However, as the device size scales down, currently used NOR and NAND technology is facing limitations from tunnel oxide and electrostatic interactions between cells (Lacaita & Wouters, 2008). To solve the scaling problems, in the last fifteen years, a number of alternative |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Atomistic Simulation Flash Memory Material Chalcogenide Glass Rapid Growth Non-volatile Computer Storage Device Size Scale Nand Technology Last Fifteen Year Last Decade Scaling Problem Electrostatic Interaction Lacaita Wouters Tunnel Oxide |
| Content Type | Text |