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Single-dot spectroscopy of gaas quantum dots fabricated by filling of self-assembled nanoholes.
| Content Provider | CiteSeerX |
|---|---|
| Author | Heyn, Ch. Klingbeil, M. Strelow, Ch. Stemmann, A. Mendach, S. Hansen, W. |
| Abstract | Ó The Author(s) 2010. This article is published with open access at Springerlink.com Abstract We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets. Using suitable process parameters, we create either uniform QDs in partially filled deep holes or QDs with very broad size distribution in completely filled shallow holes. Micro photoluminescence measurements of single QDs of both types establish sharp excitonic peaks. We measure a fine-structure splitting in the range of 22–40leV and no dependence on QD size. Furthermore, we find a decrease in exciton–biexciton splitting with increasing QD size. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Single-dot Spectroscopy Gaas Quantum Dot Fabricated Self-assembled Nanoholes Qd Size Fine-structure Splitting Local Droplet Exciton Biexciton Shallow Hole Al Droplet Suitable Process Parameter Optical Emission Sharp Excitonic Peak Micro Photoluminescence Measurement Uniform Qds Single Gaas Quantum Dot Single Qds Deep Hole Self-assembled Fashion Broad Size Distribution Open Access |
| Content Type | Text |
| Resource Type | Article |
