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Validity of the quasi-transparent model of the current injected into heavily doped emitters of bipolar devices.
| Content Provider | CiteSeerX |
|---|---|
| Author | Alamo Del, Jesus A. Swanson, Richard M. |
| Abstract | Abstract-A simple criterion that permits one to assess the accuracy of the calculation of the current injected into a heavily doped emitter using the quasi-transparent model is presented. The criterion provides an upper limit of the error incurred by the approximation when compared to an exact computer solution, without requiring any additional calculations. The gain of a bipolar transistor is an important figure of merit that significantly constricts the design of optimized devices. In modem n-p-n silicon bipolar transistors, the maximum gain achiev-able is limited by the injection of minority carriers into the heavily doped n-type emitter. Analogously, high power conversion effi-of the approximations without being forced to resort to the solution of the full problem. A simple criterion is presented in this brief. The notation used in this paper is essentially identical to that of [l] and [2], but it has been made more transparent through the avoidance of the concept of “effective doping level ” [5]. This rather unphysical entity is related to the physically meaningful equilibrium hole concentration po through po = n;o/NDeff, with nio being the intrinsic carrier concentration. In a practical 1-D n-type emitter, the hole current equation and the hole continuity equation (in the absence of generation) can be written, respectively, as [2], |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Unphysical Entity N-type Emitter Additional Calculation Exact Computer Solution Simple Criterion Quasi-transparent Model Full Problem Meaningful Equilibrium Hole Concentration Po Optimized Device Practical 1-d N-type Emitter Minority Carrier Bipolar Transistor Upper Limit Abstract-a Simple Criterion Bipolar Device Maximum Gain Important Figure High Power Conversion Heavily Doped Emitter Hole Continuity Equation Hole Current Equation Modem N-p-n Silicon Bipolar Transistor Current Injected Intrinsic Carrier Concentration |
| Content Type | Text |
| Resource Type | Article |
