NDLI: Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application.

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Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application.

Content Provider	CiteSeerX
Author	Reif, R. Tan, C. S. Fan, A. Chen, K. N.
Abstract	Abstract: Low-temperature direct Plasma-Enhanced Chemical Vapor Deposition (PECVD) oxide to thermal oxide bonding is described. The PECVD oxide is densified at 350 o C and chemical-mechanically polished to obtain reasonably smooth surface for bonding. The PECVD oxide wafer is bonded to the thermal oxide wafer at room temperature after piranha clean that leaves the wafer surfaces hydrophilic. A post-bonding anneal at 300 o C completes the bonding. A void-free bonding interface is observed from infrared imaging and the bonding strength is estimated to be 432 mJ/m 2. This bonding method can be used in a variety of applications, including three-dimensional integration. 1 Three-dimensional (3-D) integration, in the form of a vertical stack of several device (with interconnect) layers, has many potential advantages over conventional horizontal planar integration [1]. There are research efforts on developing possible technology options to realize a 3-D structure, either using recrystallization [2,3] or wafer bonding [4,5]. We have recently proposed a 3-D integration method using direct Cu-to-
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Access Restriction	Open
Subject Keyword	Vertical Stack Research Effort Many Potential Advantage Pecvd Oxide Wafer 3-d Integration Method Several Device Bonding Strength Oxide Bonding 3-d Structure Three-dimensional Integration Plasma-enhanced Chemical Vapor Deposition Thermal Oxide Wafer Smooth Surface Thin-film Transfer Application Possible Technology Option Void-free Bonding Interface Pecvd Oxide Post-bonding Anneal Room Temperature Wafer Bonding Conventional Horizontal Planar Integration Infrared Imaging Piranha Clean Low-temperature Thermal Oxide
Content Type	Text

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