Loading...
Please wait, while we are loading the content...
Similar Documents
Tech. Digest of the international symposium on low power electronics and design (islped01), hyunsik im et al vtcmos characteristics and its optimum conditions predicted by a compact analytical model.
| Content Provider | CiteSeerX |
|---|---|
| Author | Hiramoto, T. Inukai, T. Im, Hyunsik Gomyo, H. Sakurai, T. |
| Abstract | A very compact analytical model of variable threshold voltage CMOS (VTCMOS) is proposed to study the active on-current, linking it with the stand-by off-current characteristics. Comparisons of modeled results to numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme with even smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS are discussed. |
| File Format | |
| Access Restriction | Open |
| Subject Keyword | Short Channel Effect Stand-by Off-current Characteristic New Parameter Compact Analytical Model Al Vtcmos Characteristic Speed Degradation Vtcmos Scheme Numerical Simulation Vtcmos Performance Optimum Condition International Symposium Experimental Data Low Power Electronics Hyunsik Im Variable Threshold Voltage Cmos Active On-current Modeled Result Excellent Agreement Low Supply Voltage |
| Content Type | Text |
