NDLI: Molecular Scale Imaging With a Mutlilayer Superlens

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Chaturvedi, P. Fang, N.
Copyright Year	2005
Abstract	Recent theory [1] suggested a thin negative index film should function as a “superlens”, providing image detail with resolution beyond the diffraction limit—a limitation to which all positive index optics are subject. The superlens allows the recovery of evanescent waves in the image via the excitation of surface plasmons. It has been demonstrated experimentally [2] that a silver superlens allows to resolve features well below the working wavelength. Resolution as high as 60 nanometer (λ/6) half-pitch has been achieved. This unique class of superlens will enable parallel imaging and nanofabrication in a single snapshot, a feat that are not yet available with other nanoscale imaging techniques such as atomic force microscope or scanning electron microscope. In this paper, we explore the possibility of further refining the image resolution using a multilayer superlens [3]. Using a stable transfer matrix scheme, our numerical calculations show an ultimate imaging resolution of λ/24. This is made possible using alternating stacks of alumina (Al2O3) and silver (Ag) layers to enhance a broad spectrum of evanescent waves via surface plasmon modes. Furthermore, we present the effect of alterations in number of layers and thickness to the image transfer function. With optimized design of multilayer superlens (working wavelength of 387.5nm), our study indicates the feasibility of resolving features of 16nm and below. Moreover, our tolerance analysis indicates that a 380 nm commercial light source would degrade slightly the imaging resolution to about 20nm. Preliminary experiments are ongoing to demonstrate the molecular scale imaging resolution. The development of potential low-loss and high resolution superlens opens the door to exciting applications in nanoscale optical metrology and nanomanufacturing.
Sponsorship	Nanotechnology Institute
Starting Page	51
Ending Page	52
Page Count	2
File Format	PDF
ISBN	0791842088
DOI	10.1115/NANO2005-87056
e-ISBN	0791837718
Volume Number	Design, Synthesis, and Applications
Conference Proceedings	ASME 4th Integrated Nanosystems Conference
Language	English
Publisher Date	2005-09-12
Publisher Place	Berkeley, California, USA
Access Restriction	Subscribed
Subject Keyword	Atomic force microscopy Transfer functions Nanoscale phenomena Tolerance analysis Optics Scanning electron microscopes Waves Plasmons (physics) Wavelength Light sources Design Silver Nanofabrication Diffraction Nanomanufacturing Imaging Doors Metrology Resolution (optics) Excitation
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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