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| Content Provider | The American Society of Mechanical Engineers (ASME) Digital Collection |
|---|---|
| Author | Xu, Li Costas, P. Grigoropoulos |
| Copyright Year | 2005 |
| Abstract | Ultra-large grain poly-crystalline silicon has been formed by the double laser crystallization (DLC) method. In-situ images were captured to monitor the transient melting and solidification process in order to understand the crystallization induced by steep laser intensity gradients. SEM (scanning electron microscope) images of crystallized film after Secco etch revealed grain size up to 10μm. High performance thin film transistors (TFTs) were fabricated on the DLC-made poly-crystalline material. The highly localized crystal growth and well-defined orientation allowed precise definition of channels on large grains. The electrical performance of the fabricated devices was studied, indicating a field-effect mobility in the saturation range of undoped channel of 124 cm2/V.sec, threshold voltage of 0.2V and on-off current ratio of 1E8 for n-type devices. |
| Sponsorship | Heat Transfer Division and Electronic and Photonic Packaging Division |
| Starting Page | 271 |
| Ending Page | 276 |
| Page Count | 6 |
| File Format | |
| ISBN | 0791847330 |
| DOI | 10.1115/HT2005-72223 |
| e-ISBN | 0791837629 |
| Volume Number | Heat Transfer: Volume 3 |
| Conference Proceedings | ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems |
| Language | English |
| Publisher Date | 2005-07-17 |
| Publisher Place | San Francisco, California, USA |
| Access Restriction | Subscribed |
| Subject Keyword | Crystal growth Grain size Mechanical admittance Melting Crystallization Etching Thin film transistors Scanning electron microscopes Solidification Transients (dynamics) Lasers Polysilicon Silicon |
| Content Type | Text |
| Resource Type | Article |
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