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| Content Provider | The American Society of Mechanical Engineers (ASME) Digital Collection |
|---|---|
| Author | Lamba, V. K. Engles, Derick Malik, S. S. |
| Copyright Year | 2008 |
| Abstract | This work describes computer simulations of various, Silicon on Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) with double and triple-gate structures, as well as gate-all-around devices. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. Here short-channel properties of multi-gate SOI MOSFETs (MuGFETs) are studied by numerical simulation. The evolution of characteristics such as Drain induced barrier lowering (DIBL), sub-threshold slope, and threshold voltage roll-off is analyzed as a function of channel length, silicon film or fin thickness, gate dielectric thickness and dielectric constant, and as a function of the radius of curvature of the corners. The notion of an equivalent gate number is introduced. As a general rule, increasing the equivalent gate number improves the short-channel behavior of the devices. Similarly, increasing the radius of curvature of the corners improves the control of the channel region by the gate. |
| Sponsorship | Nanotechnology Institute |
| Starting Page | 89 |
| Ending Page | 93 |
| Page Count | 5 |
| File Format | |
| ISBN | 0791843239 |
| DOI | 10.1115/ENIC2008-53015 |
| e-ISBN | 0791838323 |
| Volume Number | ASME 2008 3rd Energy Nanotechnology International Conference |
| Conference Proceedings | ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences |
| Language | English |
| Publisher Date | 2008-08-10 |
| Publisher Place | Jacksonville, Florida, USA |
| Access Restriction | Subscribed |
| Subject Keyword | Dibl Mugfets Doping concentration Design Gates (closures) Computer simulation Simulation Silicon-on-insulator Silicon Mosfet transistors Engineering simulation Film thickness Modeling Corners (structural elements) |
| Content Type | Text |
| Resource Type | Article |
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