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| Content Provider | ACM Digital Library |
|---|---|
| Author | Gurulakshmi, A. B. Beham, M. P. |
| Abstract | As CMOS devices have been scaled down, the channel length shrinks and the absolute value of the threshold voltage becomes smaller due to the reduced controllability of the gate over depletion region. Drain Induced Barrier Lowering (DIBL) is a serious challenge to the efforts for downscaling CMOS technology. A two dimensional (2-D) analytical model for the threshold surface potential of a fully depleted short channel Si-MESFETs fabricated on the silicon on insulator (SOI) has been presented in this paper. The 2-D potential distribution functions in the active layer of this device is approximated as a parabolic function and the 2-D Poisson equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. The calculations have been carried out for both the uniform and the non uniform doping profiles in two dimensions. The minimum bottom potential is used to monitor the drain induced barrier lowering effect consequently. The numerical results for the bottom potential considering wide range of device parameters has also been presented. The proposed model is simple and easy to understand the behavior of the fully depleted short channel SOI-MESFETs as compared to the other models in the literature. |
| Starting Page | 1183 |
| Ending Page | 1184 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781450304498 |
| DOI | 10.1145/1980022.1980279 |
| Language | English |
| Publisher | Association for Computing Machinery (ACM) |
| Publisher Date | 2011-02-25 |
| Publisher Place | New York |
| Access Restriction | Subscribed |
| Subject Keyword | Short channel effects 2d poisson equation Bottom potential Dibl |
| Content Type | Text |
| Resource Type | Article |
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