NDLI: Spin MOSFETs as a basis for spintronics

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Spin MOSFETs as a basis for spintronics

Content Provider	ACM Digital Library
Author	Tanaka, Masaaki Sugahara, Satoshi
Copyright Year	2006
Abstract	This article reviews a recently proposed new class of spin transistors referred to as spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs), and their integrated circuit applications. The fundamental device structures, operating principle, and theoretically predicted device performance are presented. Spin MOSFETs potentially exhibit significant magnetotransport effects, such as large magneto-current, and also satisfy important requirements for integrated circuit applications such as high transconductance, low power-delay product, and low off-current. Since spin MOSFETs can perform signal processing and logic operations and can store digital data using both charge transport and spin degrees of freedom, they are expected to be building blocks for memory cells and logic gates in spin-electronic integrated circuits. Novel spin-electronic integrated circuit architectures for nonvolatile memory and reconfigurable logic employing spin MOSFETs are also presented.
Starting Page	197
Ending Page	219
Page Count	23
File Format	PDF
ISSN	15533077
e-ISSN	15533093
DOI	10.1145/1149976.1149980
Volume Number	2
Issue Number	2
Journal	ACM Transactions on Storage (TOS)
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2006-05-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	MOSFETs Spintronics Spin MOSFETs Spin transistors
Content Type	Text
Resource Type	Article
Subject	Hardware and Architecture

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