NDLI: Understanding SRAM Stability via Bifurcation Analysis: Analytical Models and Scaling Trends

Content Provider	ACM Digital Library
Author	Ho, Yenpo Huang, Garng M. Li, Peng
Copyright Year	2014
Abstract	In the past decades, aggressive scaling of transistor feature size has been a primary force driving higher Static Random Access Memory (SRAM) integration density. Due to technology scaling, nanometer SRAM designs become increasingly vulnerable to stability challenges. The traditional way of analyzing stability is through the use of Static Noise Margins (SNMs). SNMs are not capable of capturing the key nonlinear dynamics associated with memory operations, leading to imprecise characterization of stability. This work rigorously develops dynamic stability concepts and, more importantly, captures them in physically based analytical models. By leveraging nonlinear stability theory, we develop analytical models that characterize the minimum required amplitude and duration of injected current noises that can flip the SRAM state. These models, which are parameterized in key design, technology, and operating condition parameters, provide important design insights and offer a basis for predicting scaling trends of SRAM dynamic stability.
Starting Page	1
Ending Page	25
Page Count	25
File Format	PDF
ISSN	10844309
e-ISSN	15577309
DOI	10.1145/2647957
Volume Number	19
Issue Number	4
Journal	ACM Transactions on Design Automation of Electronic Systems (TODAES)
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2014-08-29
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Analytical model Critical current Critical time Dynamic noise margin Static noise margin Static random access memory Voltage transfer curves
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Electrical and Electronic Engineering

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