Methods of Forming Semiconductor Structures Including Multi-portion Liners

Content Provider	The Lens
Abstract	A method of forming a semiconductor structure. The method comprises forming a protective portion of a liner on at least a portion of stack structures on a substrate. The protective portion comprises a material formulated to adhere to the stack structures. A conformal portion of the liner is formed on the protective portion of the liner or on the protective portion of the liner and exposed materials of the stack structures. At least one of the protective portion and the conformal portion does not comprise aluminum. Additional methods of forming a semiconductor structure are disclosed, as are semiconductor structures including the liners comprising the protective portion and the conformal portion.
Related Links	https://www.lens.org/lens/patent/011-396-465-288-108/frontpage
Language	English
Publisher Date	2019-04-02
Access Restriction	Open
Content Type	Text
Resource Type	Patent
Jurisdiction	United States of America
Date Applied	2014-04-03
Agent	Traskbritt
Applicant	Micron Technology Inc
Application No.	201414244486
Claim	A method of forming a semiconductor structure, the method comprising: forming a protective portion of a liner on stack structures on a material, the protective portion comprising silicon carboxynitride and the stack structures comprising chalcogenide materials and carbon materials; and forming a conformal portion of the liner on the protective portion of the liner, the conformal portion comprising silicon carboxynitride and the silicon carboxynitride of the protective portion comprising a lower amount of carbon than the silicon carboxynitride of the conformal portion. The method of claim 1 , wherein forming a protective portion of a liner on stack structures on a material comprises forming the protective portion of the liner substantially only on the chalcogenide materials and carbon materials of the stack structures. The method of claim 1 , wherein forming a protective portion of a liner on stack structures on a material comprises forming the protective portion of the liner on sidewalls of the stack structures, on a top horizontal surface of the stack structures, and on a top horizontal surface of the materia The method of claim 1 , wherein forming a protective portion of a liner on stack structures on a material comprises forming the protective liner without damaging materials of the stack structures. The method of claim 1 , wherein forming a conformal portion of the liner on the protective portion comprises forming the conformal portion of the liner using atomic layer deposition, pulsed chemical vapor deposition, remote plasma chemical vapor deposition, or chemical vapor deposition. The method of claim 1 , further comprising forming an additional portion of the liner on the conformal portion of the liner. The method of claim 1 , wherein forming a protective portion of a liner on stack structures on a material comprises forming each of the stack structures comprising a conductive material on the material, a bottom electrode material on the conductive material, a phase change material on the bottom electrode material, a middle electrode material on the phase change material, another phase change material on the middle electrode material, and a top electrode material on the another phase change materia The method of claim 1 , wherein forming a conformal portion of the liner on the protective portion comprises forming the liner comprising the protective portion and the conformal portion on the stack structures, the liner exhibiting about 80% step coverage. The method of claim 1 , wherein forming a conformal portion of the liner on the protective portion comprises forming the silicon carboxynitride by remote plasma chemical vapor deposition. A method of forming a semiconductor structure, the method comprising: forming a protective portion of a liner on stack structures on a material, the protective portion comprising silicon carbonitride; and forming a conformal portion of the liner on the protective portion, the conformal portion comprising silicon carbonitride and the silicon carbonitride of the protective portion comprising a lower amount of carbon than the silicon carbonitride of the conformal portion. The method of claim 10 , wherein forming a protective portion of a liner on stack structures on a material comprises forming the protective portion by a deposition process conducted at a temperature of less than about 250° C. The method of claim 10 , wherein forming a protective portion of a liner on stack structures on a material comprises forming the protective portion by a deposition process selected from the group consisting of plasma enhanced chemical vapor deposition, inductively coupled plasma chemical vapor deposition, pulsed chemical vapor deposition, and remote plasma chemical vapor deposition and conducted at a temperature of less than about 250° C. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises conformally forming the conformal portion using an atomic layer deposition process. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises forming a thickness of the conformal portion on the protective portion of the liner, treating the thickness of the conformal portion, forming another thickness of the conformal portion on the treated thickness of the conformal portion, and treating the another thickness of the conformal portion. The method of claim 14 , wherein treating the thickness of the conformal portion or treating the another thickness of the conformal portion comprises subjecting the thickness of the conformal portion or the another thickness of the conformal portion to heat, ultraviolet radiation, or a plasma. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises forming the conformal portion comprising the silicon carbonitride in contact with the protective portion. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises forming the conformal portion by plasma enhanced chemical vapor deposition. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises forming the silicon carbonitride by direct plasma chemical vapor deposition. The method of claim 10 , wherein forming a conformal portion of the liner on the protective portion comprises forming the silicon carbonitride by remote plasma chemical vapor deposition.
CPC Classification	ELECTRONIC MEMORY DEVICES ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR Semiconductor Devices Not Covered By Class H10
Examiner	David C Spalla
Extended Family	011-396-465-288-108 022-354-298-937-847 132-070-958-965-020 110-366-160-271-913 167-805-938-464-16X 171-222-122-018-394 165-842-312-665-955 081-674-311-174-403 026-218-033-202-705 056-676-424-514-26X
Patent ID	10249819
Inventor/Author	Campbell Kyle B Vasilyeva Irina Good Farrell M Bhat Vishwanath Chong Kyuchul
IPC	H01L45/00 H01L21/768 H01L27/24
Status	Active
Owner	Micron Technology Inc
Simple Family	011-396-465-288-108 022-354-298-937-847 132-070-958-965-020 110-366-160-271-913 167-805-938-464-16X 171-222-122-018-394 165-842-312-665-955 026-218-033-202-705 081-674-311-174-403 056-676-424-514-26X
CPC (with Group)	H10B63/24 H10N70/063 H10N70/231 H10N70/801 H10N70/826 H01L21/76832 H01L21/76834
Issuing Authority	United States Patent and Trademark Office (USPTO)
Kind	Patent/New European patent specification (amended specification after opposition procedure)