Semiconductor Device and Manufacturing Method Thereof

Content Provider	The Lens
Abstract	An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Related Links	https://www.lens.org/lens/patent/010-988-347-010-706/frontpage
Language	English
Publisher Date	2019-10-24
Access Restriction	Open
Content Type	Text
Resource Type	Patent
Jurisdiction	United States of America
Date Applied	2019-07-02
Applicant	Semiconductor Energy Lab
Application No.	201916459951
Claim	(canceled) A semiconductor device comprising: a first insulating film over a substrate, the first insulating film comprising silicon nitride; a second insulating film over the first insulating film, the second insulating film comprising silicon oxide; and an oxide semiconductor film over the second insulating film, wherein the oxide semiconductor film comprises indium and zinc. The semiconductor device according to claim 2 , wherein the oxide semiconductor film further comprises gallium. The semiconductor device according to claim 2 , wherein the first insulating film and the second insulating film each have a thickness of 50 nm to 100 nm. The semiconductor device according to claim 2 , wherein the oxide semiconductor film has a thickness of 200 nm or less. The semiconductor device according to claim 2 , wherein an amorphous state and a crystalline state exist in the oxide semiconductor film. The semiconductor device according to claim 2 , further comprising a passivation film over the oxide semiconductor film, wherein the passivation film comprises silicon oxide. The semiconductor device according to claim 7 , wherein the passivation film is in direct contact with the oxide semiconductor film. The semiconductor device according to claim 7 , wherein the passivation film is in direct contact with the second insulating film. A semiconductor device comprising: a gate electrode over a substrate; a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride; a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon oxide; and an oxide semiconductor film over the second gate insulating film, wherein the oxide semiconductor film comprises indium and zinc. The semiconductor device according to claim 10 , wherein the oxide semiconductor film further comprises gallium. The semiconductor device according to claim 10 , wherein the first gate insulating film and the second gate insulating film each have a thickness of 50 nm to 100 nm. The semiconductor device according to claim 10 , wherein the oxide semiconductor film has a thickness of 200 nm or less. The semiconductor device according to claim 10 , wherein an amorphous state and a crystalline state exist in the oxide semiconductor film. A semiconductor device comprising: a gate electrode over a substrate; a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride; a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon oxide; an oxide semiconductor film over the second gate insulating film; and a passivation film over the oxide semiconductor film, wherein the passivation film comprises silicon oxide. The semiconductor device according to claim 15 , wherein the oxide semiconductor film comprises indium and zinc. The semiconductor device according to claim 16 , wherein the oxide semiconductor film further comprises gallium. The semiconductor device according to claim 15 , wherein the first gate insulating film and the second gate insulating film each have a thickness of 50 nm to 100 nm. The semiconductor device according to claim 15 , wherein the oxide semiconductor film has a thickness of 200 nm or less. The semiconductor device according to claim 15 , wherein an amorphous state and a crystalline state exist in the oxide semiconductor film. The semiconductor device according to claim 15 , wherein the passivation film is in direct contact with the oxide semiconductor film. The semiconductor device according to claim 15 , wherein the passivation film is in direct contact with the second gate insulating film.
CPC Classification	OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN;NON-LINEAR OPTICS;FREQUENCY-CHANGING OF LIGHT;OPTICAL LOGIC ELEMENTS;OPTICAL ANALOGUE/DIGITAL CONVERTERS Semiconductor Devices Not Covered By Class H10
Extended Family	144-276-399-983-992 197-989-704-701-430 114-878-061-026-714 129-404-672-275-445 072-889-396-211-366 039-449-957-742-138 174-549-767-860-312 010-988-347-010-706 099-981-607-051-756 150-506-933-455-304 059-412-094-327-129 020-834-644-697-71X 060-977-326-139-017 088-272-164-118-278 076-543-674-884-868 110-826-167-832-335 104-993-769-650-45X 110-825-983-498-676 010-591-068-249-225 063-353-625-190-676 014-697-649-129-257 083-312-165-448-967 026-209-667-768-482 014-619-459-872-249 146-913-442-440-275 102-769-241-160-71X 151-134-365-313-384 004-455-409-550-961 176-638-848-171-444 126-295-278-034-986 031-996-742-560-128 015-112-370-376-939 054-721-287-177-785 098-123-946-177-399 141-303-795-171-146 052-391-214-784-048 089-046-808-858-089 158-149-360-371-231 190-095-117-883-252 197-493-502-835-490 185-569-768-560-888 145-420-766-697-593 088-891-772-344-271 170-433-035-505-462 184-350-004-247-370 174-403-757-399-508 186-037-216-798-176 028-314-583-614-387 028-290-695-405-439 008-692-889-336-714 096-854-308-899-406 033-145-795-573-165 110-257-096-596-808 161-197-413-436-794 179-387-818-597-415 073-493-016-772-301 131-081-590-183-086 070-813-020-643-570 136-090-832-198-472 116-229-469-923-489 065-136-527-352-75X 071-064-945-676-340 129-566-159-276-158 053-430-134-517-113 125-459-951-014-240 143-867-503-223-060 184-374-024-585-269 143-874-517-214-806 088-196-696-445-50X 062-048-057-666-180 126-909-109-559-291 080-638-359-734-399 169-136-960-887-721 022-253-386-275-131 002-593-482-098-900 129-830-367-889-16X 133-810-574-187-159 159-038-396-636-291 042-992-897-142-829 096-269-421-070-723 198-831-526-892-284 111-472-690-671-83X 070-216-815-172-738 060-611-537-416-751 036-948-635-917-035 103-423-451-247-221 066-815-491-046-582 001-062-275-692-06X 094-296-246-017-247 100-736-793-578-379 178-304-539-273-87X 186-053-852-524-168 070-254-546-472-237 090-376-778-630-848 191-371-927-799-057 083-994-568-396-242 122-908-381-649-712 129-190-379-029-439 180-202-016-424-127 137-947-159-658-710 168-865-545-545-445 131-913-316-795-222 120-373-027-091-997 197-954-402-496-275 020-987-623-540-745 014-884-209-295-95X 134-755-144-238-216 169-211-306-121-243 009-341-076-800-948 037-255-328-565-302 186-484-846-153-668 170-234-382-689-68X 166-759-083-554-23X 189-163-139-300-325 027-207-188-601-762 029-213-404-959-640 188-967-332-818-035 132-381-319-478-152
Patent ID	20190326444
Inventor/Author	Akimoto Kengo Honda Tatsuya Sone Norihito
IPC	H01L29/786 G02F1/1368 H01L21/02 H01L21/20 H01L21/336 H01L21/428 H01L21/465 H01L21/477 H01L27/12 H01L29/04 H01L29/66 H01L51/50 H05B44/00
Status	Discontinued
Owner	Semiconductor Energy Laboratory Co. Ltd
Simple Family	144-276-399-983-992 197-989-704-701-430 114-878-061-026-714 129-404-672-275-445 072-889-396-211-366 039-449-957-742-138 174-549-767-860-312 010-988-347-010-706 099-981-607-051-756 150-506-933-455-304 059-412-094-327-129 020-834-644-697-71X 060-977-326-139-017 088-272-164-118-278 076-543-674-884-868 110-826-167-832-335 104-993-769-650-45X 110-825-983-498-676 010-591-068-249-225 063-353-625-190-676 014-697-649-129-257 083-312-165-448-967 026-209-667-768-482 014-619-459-872-249 146-913-442-440-275 102-769-241-160-71X 151-134-365-313-384 004-455-409-550-961 176-638-848-171-444 126-295-278-034-986 031-996-742-560-128 015-112-370-376-939 054-721-287-177-785 098-123-946-177-399 141-303-795-171-146 052-391-214-784-048 089-046-808-858-089 158-149-360-371-231 190-095-117-883-252 197-493-502-835-490 185-569-768-560-888 145-420-766-697-593 088-891-772-344-271 170-433-035-505-462 184-350-004-247-370 174-403-757-399-508 186-037-216-798-176 028-290-695-405-439 008-692-889-336-714 096-854-308-899-406 033-145-795-573-165 110-257-096-596-808 161-197-413-436-794 179-387-818-597-415 073-493-016-772-301 131-081-590-183-086 070-813-020-643-570 136-090-832-198-472 116-229-469-923-489 065-136-527-352-75X 071-064-945-676-340 129-566-159-276-158 053-430-134-517-113 125-459-951-014-240 143-867-503-223-060 184-374-024-585-269 143-874-517-214-806 088-196-696-445-50X 062-048-057-666-180 126-909-109-559-291 080-638-359-734-399 169-136-960-887-721 022-253-386-275-131 002-593-482-098-900 129-830-367-889-16X 133-810-574-187-159 159-038-396-636-291 042-992-897-142-829 096-269-421-070-723 198-831-526-892-284 111-472-690-671-83X 070-216-815-172-738 060-611-537-416-751 036-948-635-917-035 103-423-451-247-221 001-062-275-692-06X 094-296-246-017-247 100-736-793-578-379 178-304-539-273-87X 186-053-852-524-168 070-254-546-472-237 090-376-778-630-848 191-371-927-799-057 083-994-568-396-242 122-908-381-649-712 129-190-379-029-439 180-202-016-424-127 137-947-159-658-710 168-865-545-545-445 131-913-316-795-222 120-373-027-091-997 197-954-402-496-275 020-987-623-540-745 014-884-209-295-95X 134-755-144-238-216 169-211-306-121-243 009-341-076-800-948 037-255-328-565-302 186-484-846-153-668 170-234-382-689-68X 166-759-083-554-23X 189-163-139-300-325 027-207-188-601-762 029-213-404-959-640 188-967-332-818-035 132-381-319-478-152
CPC (with Group)	G02F1/167 H10D86/60 H10D86/423 H10D30/031 H10D30/67 H10D30/6756 H10D30/6755 H01L21/02667 H01L21/02554 H01L21/02565 H10D62/40 H10D62/405 H10D99/00 H01L21/0217 H01L21/02164 H01L21/465 H01L21/02266 H01L21/477 H01L21/428 H01L21/02178 H01L21/02631 H10D30/6757 H10D86/0229
Issuing Authority	United States Patent and Trademark Office (USPTO)
Kind	Patent Application Publication