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Bipolar Junction Transistor
| Content Provider | The Lens |
|---|---|
| Abstract | A bipolar junction transistor includes: an emitter region; a base region; and a collector region, wherein each of the emitter region, the base region, and the collector region comprises fin-shaped structures. Preferably, the emitter region, the base region, and the collector region are disposed along a first direction and the fin-shaped structures are disposed along a second direction, in which the first direction is orthogonal to the second direction. |
| Related Links | https://www.lens.org/lens/patent/009-235-819-025-622/frontpage |
| Language | English |
| Publisher Date | 2019-08-29 |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Patent |
| Jurisdiction | United States of America |
| Date Applied | 2019-05-07 |
| Applicant | United Microelectronics Corp |
| Application No. | 201916406003 |
| Claim | A bipolar junction transistor, comprising: an emitter region; a base region; and a collector region, wherein each of the emitter region, the base region, and the collector region comprises fin-shaped structures. The bipolar junction transistor of claim 1 , wherein the emitter region, the base region, and the collector region are disposed along a first direction and the fin-shaped structures are disposed along a second direction. The bipolar junction transistor of claim 2 , wherein the first direction is orthogonal to the second direction. The bipolar junction transistor of claim 1 , wherein an edge of the emitter region is aligned with an edge of the base region. The bipolar junction transistor of claim 1 , wherein an edge of the base region is aligned with an edge of the collector region. The bipolar junction transistor of claim 1 , wherein an edge of the emitter region is aligned with an edge of the base region and an edge of the collector region. The bipolar junction transistor of claim 1 , wherein the base region comprises a first portion and a second portion. The bipolar junction transistor of claim 7 , further comprising an isolation region between the first portion and the second portion. The bipolar junction transistor of claim 1 , wherein an edge of the emitter region is equal to an edge of the base region. The bipolar junction transistor of claim 9 , further comprising an isolation region between the edge of the emitter region and the edge of the base region. The bipolar junction transistor of claim 1 , wherein the base region comprise a rectangular region according to a top view of the bipolar junction transistor. |
| Extended Family | 151-505-661-513-006 051-284-721-440-696 130-193-565-991-575 095-126-095-093-713 009-235-819-025-622 087-033-412-431-315 190-308-333-300-417 |
| Patent ID | 20190267478 |
| Inventor/Author | Cho Sheng Pan Chen-wei |
| IPC | H01L29/73 H01L29/06 H01L29/08 H01L29/735 |
| Status | Active |
| Simple Family | 051-284-721-440-696 151-505-661-513-006 130-193-565-991-575 095-126-095-093-713 009-235-819-025-622 087-033-412-431-315 190-308-333-300-417 |
| CPC (with Group) | H10D62/137 H10D62/177 H10D64/231 H10D64/281 H10D10/00 H10D62/135 H10D62/116 H10D62/126 H10D10/40 H10D10/60 |
| Issuing Authority | United States Patent and Trademark Office (USPTO) |
| Kind | Patent Application Publication |
