Display Device Including Transistor and Manufacturing Method Thereof

Content Provider	The Lens
Abstract	An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
Related Links	https://www.lens.org/lens/patent/009-189-487-822-611/frontpage
Language	English
Publisher Date	2019-02-19
Access Restriction	Open
Content Type	Text
Resource Type	Patent
Jurisdiction	United States of America
Date Applied	2017-11-30
Agent	Robinson Intellectual Property Law Office Eric J. Robinson
Applicant	Semiconductor Energy Lab
Application No.	201715827318
Claim	A semiconductor device comprising: a transistor comprising: a first gate electrode over a substrate; a first gate insulating layer over the first gate electrode; an oxide semiconductor layer over the first gate insulating layer; a first insulating layer over the oxide semiconductor layer; a source electrode and a drain electrode over the first insulating layer; a second insulating layer over the source electrode and the drain electrode; and a second gate electrode over the second insulating layer; a resin layer over the second gate electrode; a pixel electrode over the resin layer; a light emitting layer over the pixel electrode; and an electrode over the light emitting layer, wherein the first insulating layer and the second insulating layer are configured to be a second gate insulating layer, wherein the second gate electrode comprises a transparent conductive layer, wherein the second gate electrode overlaps the source electrode and the drain electrode, wherein in a channel length direction of the transistor, a length of the first gate electrode is larger than a length of the oxide semiconductor layer, and wherein in the channel length direction of the transistor, a length of the second gate electrode is smaller than the length of the oxide semiconductor layer. The semiconductor device according to claim 1 , wherein the first insulating layer is configured to be a channel protective film. The semiconductor device according to claim 1 , wherein the resin layer is a planarization layer. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a microcrystalline region. A semiconductor device comprising: a first conductive layer over a substrate; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second conductive layer in contact with a top surface of the oxide semiconductor layer; a third conductive layer in contact with the top surface of the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer; a fourth conductive layer over the second insulating layer; and a metal layer for shielding at least part of the oxide semiconductor layer from light, wherein the first conductive layer comprises a region configured to serve as a first gate of a transistor, wherein the fourth conductive layer comprises a region configured to serve as a second gate of the transistor, wherein in a channel length direction of the transistor, a length of the first conductive layer is larger than a length of the oxide semiconductor layer, wherein in the channel length direction of the transistor, a length of the fourth conductive layer is smaller than the length of the oxide semiconductor layer, wherein the fourth conductive layer transmits light, wherein the oxide semiconductor layer comprises a first region and a second region, wherein the first region overlaps with the second conductive layer or the third conductive layer, wherein the second region does not overlap with the second conductive layer and the third conductive layer, wherein a thickness of the oxide semiconductor layer in the second region is smaller than a thickness of the oxide semiconductor layer in the first region, and wherein the metal layer overlaps with the second region. The semiconductor device according to claim 6 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc. The semiconductor device according to claim 6 , wherein the oxide semiconductor layer comprises a microcrystalline region. A semiconductor device comprising: a first conductive layer over a substrate; a first insulating layer over the first conductive layer; an oxide semiconductor layer over the first insulating layer; a second conductive layer in contact with a top surface of the oxide semiconductor layer; a third conductive layer in contact with the top surface of the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer; a fourth conductive layer over the second insulating layer; and a metal layer for shielding at least part of the oxide semiconductor layer from light, wherein the first conductive layer comprises a region configured to serve as a first gate of a transistor, wherein the fourth conductive layer comprises a region configured to serve as a second gate of the transistor, wherein in a channel length direction of the transistor, a length of the first conductive layer is larger than a length of the oxide semiconductor layer, wherein in the channel length direction of the transistor, a length of the fourth conductive layer is smaller than the length of the oxide semiconductor layer, wherein the fourth conductive layer transmits light, and wherein the metal layer overlaps with the fourth conductive layer and the oxide semiconductor layer. The semiconductor device according to claim 9 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc. The semiconductor device according to claim 9 , wherein the oxide semiconductor layer comprises a microcrystalline region.
CPC Classification	Semiconductor Devices Not Covered By Class H10 ORGANIC ELECTRIC SOLID-STATE DEVICES
Examiner	Thanh Y Tran
Extended Family	028-737-885-490-61X 041-439-867-189-570 135-107-150-517-909 145-002-888-345-340 037-799-514-592-203 084-478-286-678-300 009-383-809-293-863 037-194-662-552-949 017-618-307-728-226 046-207-449-872-560 122-698-114-451-880 126-744-175-785-892 091-400-849-276-983 015-233-050-969-55X 070-705-197-381-862 124-238-989-181-292 128-969-073-437-280 177-213-788-564-926 071-331-431-293-741 023-045-098-725-572 194-280-464-755-079 067-434-184-789-148 032-675-676-399-936 112-630-097-871-360 123-991-063-812-859 194-026-257-230-460 110-711-734-233-292 077-940-245-685-970 122-845-811-493-629 097-123-814-907-496 099-327-629-106-432 107-656-736-499-038 035-370-161-806-442 033-417-231-054-761 123-125-227-485-567 058-999-640-706-601 181-798-475-191-015 152-469-930-172-547 116-846-124-735-611 139-859-153-844-70X 137-085-183-261-442 118-529-243-928-92X 190-420-717-163-220 119-272-729-899-757 064-514-089-867-989 100-656-986-263-613 081-907-573-804-924 127-203-880-401-430 193-349-395-822-309 018-413-004-441-823 187-009-663-060-518 118-236-955-735-764 117-682-315-346-764 145-430-514-088-870 170-686-721-318-240 151-384-869-457-21X 027-742-647-800-571 187-784-022-978-246 004-516-676-188-262 052-280-578-134-570 123-303-884-233-633 187-835-473-035-906 097-232-914-267-089 009-663-638-393-638 013-226-144-686-050 042-926-207-374-425 027-197-350-836-310 141-509-411-613-907 162-698-042-413-316 101-567-832-399-202 034-710-504-965-827 059-327-292-986-081 002-173-121-369-33X 032-506-013-837-23X 041-463-783-397-700 083-992-499-336-350 061-619-883-215-437 086-148-499-992-097 196-089-181-579-973 013-671-751-211-992 021-586-072-304-699 199-073-465-341-652 052-658-391-962-298 026-552-446-591-570 084-580-630-122-100 009-189-487-822-611 035-549-033-073-627 191-617-885-365-230 198-833-619-407-873 144-554-988-187-537 043-531-620-605-91X 003-147-527-850-69X 131-911-913-700-202 097-778-171-124-785 192-964-051-424-17X
Patent ID	10211231
Inventor/Author	Sakata Junichiro Sasaki Toshinari Hosoba Miyuki
IPC	H01L27/12 H01L21/02 H01L29/24 H01L29/66 H01L29/786
Status	Active
Simple Family	028-737-885-490-61X 041-439-867-189-570 135-107-150-517-909 145-002-888-345-340 037-799-514-592-203 084-478-286-678-300 009-383-809-293-863 037-194-662-552-949 017-618-307-728-226 046-207-449-872-560 122-698-114-451-880 126-744-175-785-892 091-400-849-276-983 015-233-050-969-55X 070-705-197-381-862 124-238-989-181-292 128-969-073-437-280 177-213-788-564-926 071-331-431-293-741 023-045-098-725-572 194-280-464-755-079 067-434-184-789-148 032-675-676-399-936 112-630-097-871-360 123-991-063-812-859 194-026-257-230-460 110-711-734-233-292 077-940-245-685-970 122-845-811-493-629 097-123-814-907-496 099-327-629-106-432 107-656-736-499-038 035-370-161-806-442 033-417-231-054-761 123-125-227-485-567 058-999-640-706-601 181-798-475-191-015 152-469-930-172-547 116-846-124-735-611 139-859-153-844-70X 137-085-183-261-442 118-529-243-928-92X 190-420-717-163-220 119-272-729-899-757 064-514-089-867-989 100-656-986-263-613 081-907-573-804-924 127-203-880-401-430 193-349-395-822-309 018-413-004-441-823 187-009-663-060-518 118-236-955-735-764 117-682-315-346-764 145-430-514-088-870 170-686-721-318-240 151-384-869-457-21X 027-742-647-800-571 187-784-022-978-246 004-516-676-188-262 052-280-578-134-570 123-303-884-233-633 187-835-473-035-906 097-232-914-267-089 009-663-638-393-638 013-226-144-686-050 042-926-207-374-425 027-197-350-836-310 141-509-411-613-907 162-698-042-413-316 101-567-832-399-202 034-710-504-965-827 059-327-292-986-081 002-173-121-369-33X 032-506-013-837-23X 041-463-783-397-700 083-992-499-336-350 061-619-883-215-437 086-148-499-992-097 196-089-181-579-973 013-671-751-211-992 021-586-072-304-699 199-073-465-341-652 052-658-391-962-298 026-552-446-591-570 084-580-630-122-100 009-189-487-822-611 035-549-033-073-627 191-617-885-365-230 198-833-619-407-873 144-554-988-187-537 043-531-620-605-91X 003-147-527-850-69X 131-911-913-700-202 097-778-171-124-785 192-964-051-424-17X
CPC (with Group)	H01L21/02554 H01L21/02565 H01L21/02631 H10D99/00 H10D30/6733 H10D30/6734 H10D30/6755 H10D30/6757 H10D86/60 H10K59/1213 H10D86/431 H10D86/441 H10K59/131 H10D86/451 H10K59/124 H10D86/423 H10D30/6723 H10D30/6744 H10D62/80 H10D86/0221 H10D86/411
Issuing Authority	United States Patent and Trademark Office (USPTO)
Kind	Patent/New European patent specification (amended specification after opposition procedure)