Photovoltaic Devices Comprising An Anti-reflective Layer Containing Dispersed Objects Having Areas with Different Refractive Indices

Content Provider	The Lens
Abstract	The present invention relates to photovoltaic devices which comprise: a semiconducting material able to ensure a photovoltaic effect when it is subject to electromagnetic radiation;a anti-reflective layer, transparent towards said electromagnetic radiation ensuring the photovoltaic effect, this anti-reflective layer containing, in the dispersed state, objects with dimensions of less than 5 microns, preferably less than 2 microns, said objects comprising at least two areas consisting of two different substrates, transparent towards said electromagnetic radiation and having distinct refraction indices, i.e.: a core having a first refractive index n C ; anda layer surrounding the core, a so-called crust, having a second refractive index n E , distinct from the refractive index n C of the core, the ratio of the dimensions of the core to the dimensions of the core/crust assembly being comprised 1:1.5 and 1:5.
Related Links	https://www.lens.org/lens/patent/009-145-762-675-720/frontpage
Language	English
Publisher Date	2019-05-07
Access Restriction	Open
Content Type	Text
Resource Type	Patent
Jurisdiction	United States of America
Date Applied	2011-03-23
Agent	Steven M. Ritchey Thompson Coburn Llp
Applicant	Gaud Vincent Louarn Melanie Rouge Fabien Polyrise
Application No.	201113636559
Claim	A photovoltaic device comprising: a semiconducting material having a photovoltaic effect when the semiconducting material is subject to electromagnetic radiation; and one or two single-layer deposit anti-reflective layers, wherein each of the one or two single-layer deposit anti-reflective layers is transparent towards said electromagnetic radiation and comprises a sol/gel coating and dispersed objects with dimensions of less than 400 nm in the sol/gel coating, wherein the sol/gel coating comprises silica, and wherein each of the dispersed objects: is transparent towards said electromagnetic radiation; comprises: an inorganic core substrate having dimensions and a refractive index, n C ; and a crust surrounding the inorganic core substrate, wherein the crust has a refractive index, n E , distinct from n C , and wherein the difference between n C and n E is an absolute value of at least 0.1; and has a core dimensions to dispersed object dimensions ratio that is between 1:1.8 and 1:4. The photovoltaic device according to claim 1 , further comprising a protective layer of said semiconducting material, wherein one of the one or two single-layer deposit anti-reflective layers is an anti-reflective internal layer that is between the semiconducting material and the protective layer. The photovoltaic device according to claim 1 , further comprising a solar concentration system equipped with a lens having two faces, wherein one of the one or two single-layer deposit anti-reflective layers is a first anti-reflective Ions layer that is on one of the two faces of the lens, in either direct or indirect contact with one of the two faces of the lens. The photovoltaic device according to claim 2 , wherein the protective layer is a glass sheet or a polymeric sheet. The photovoltaic device according to claim 2 , wherein the protective layer is deposited on a polymeric sublayer, and wherein the anti-reflective internal layer is between the semiconducting material and the polymeric sublayer. The photovoltaic device according to claim 1 , wherein each of the one or two single-layer deposit anti-reflective layers has a thickness between 10 nm and 1 micron. The photovoltaic device according to claim 1 , wherein each of the one or two single-layer deposit anti-reflective layers has a thickness between 50 nm and 500 nm. The photovoltaic device according to claim 2 , wherein the protective layer is further provided with one of the one or two single-layer deposit anti-reflective layers deposited on the protective layer. The photovoltaic device according to claim 1 , wherein the device is a photovoltaic module. The photovoltaic device according to claim 4 , wherein the polymeric sheet is polyethylene terephthalate (PET) or ethylene tetrafluoroethylene (ETFE). The photovoltaic device according to claim 5 , wherein the polymeric sublayer is an ethylene-vinyl acetate (EVA) matrix. The photovoltaic device according to claim 1 , wherein the core substrate is selected from the group consisting of a mineral oxide, metal sulfide, metal nitride, metal halide, metal, and combinations thereof. The photovoltaic device according to claim 1 , wherein the core substrate is selected from the group consisting of silica, metal oxides, metal sulfides, metals, and combinations thereof. The photovoltaic device according to claim 3 , wherein one of the one or two single-layer deposit anti-reflective layers is a second anti-reflective layer that is on the other of the two faces of the lens, in either direct or indirect contact with the other of the two faces of the lens. The photovoltaic device according to claim 1 , wherein the core dimensions to dispersed object dimensions ratio is 1:2.5. The photovoltaic device according to claim 1 , wherein the difference between n C and n E is an absolute value of at least 0.3. The photovoltaic device according to claim 2 , wherein there is only one of the one or two single-layer deposit anti-reflective layers and the one single-layer deposit anti-reflective layer is the anti-reflective internal layer. The photovoltaic device according to claim 1 , wherein the sol/gel coating is synthesized from a tetraalkoxysilane. The photovoltaic device according to claim 1 , wherein the sol/gel coating is synthesized from a mixture of alkoxides that comprises: at least one silane having 4 hydrolyzable groups; and at least one silane having less than 4 hydrolyzable groups having a formula of R n SiX 4-n , wherein: n is an integer equal to 1, 2 or 3; each R group is independently selected and is a non-hydrolyzable organic group; and X is (i) a hydrolyzable group selected from the group consisting of trimethoxysilane, triethoxysilane, γ-propyltrimethoxysilane, γ-propyltriethoxysilane, γ-aminopropyl-trimethoxysilane, γ-aminopropyl-triethoxysilane, γ-mercaptopropyl-trimethoxysilane, γ-mercaptopropyl-triethoxysilane, γ-(meth-)acryloylpropryl-trimethoxysilane, γ-(meth)acryloylpropyl-triethoxysilane, γ-glycidoxypropyl-trimethoxysilane, γ-glycidoxypropyl-triethoxysilane, di-methoxysilane, di-ethoxysilane, polydimethylsiloxane α-ω-disilanol, and polydiethylsiloxane α-ω-disilanol, or (ii) a halogen group. A method for forming a single-layer deposit anti-reflective layer on a semiconducting material of a photovoltaic device, the method comprising: depositing a single layer of material transparent towards electromagnetic radiation on the semiconducting material of the photovoltaic device, wherein said material contains a sol/gel and dispersed objects with dimensions of less than 400 nm in the sol/gel, wherein the sol/gel comprises silane, and wherein each of the dispersed objects: is transparent towards said electromagnetic radiation; comprises: an inorganic core substrate having dimensions and a refractive index, n C ; and a crust surrounding the inorganic core substrate, wherein the crust has a refractive index, n E , distinct from n C , and wherein the difference between n C and n E is an absolute value of at least 0.1; and has a core dimensions to dispersed object dimensions ratio that is between 1:1.8 and 1:4; thereby forming the single-layer deposit anti-reflective layer on the semiconductor material of the photovoltaic device, wherein the single-layer deposit anti-reflective layer is transparent towards the electromagnetic radiation and comprises the dispersed objects in a sol/gel coating that comprises silica, wherein the sol/gel coating results from the sol/ge The method according to claim 20 , wherein the core substrate is selected from the group consisting of a mineral oxide, metal sulfide, metal nitride, metal halide, metal, and combinations thereof. The method according to claim 20 , wherein the core substrate is selected from the group consisting of silica, metal oxides, metal sulfides, metals, and combinations thereof. The method according to claim 20 , wherein the core dimensions to dispersed object dimensions ratio is 1:2.5. The method according to claim 20 , wherein the difference between n C and n E is an absolute value of at least 0.3. The photovoltaic device according to claim 17 , wherein the tetraalkoxysilane is tetramethoxysilane or tetraethoxysilane.
CPC Classification	COATING COMPOSITIONS; e.g. PAINTS; VARNISHES OR LACQUERS;FILLING PASTES;CHEMICAL PAINT OR INK REMOVERS;INKS;CORRECTING FLUIDS;WOODSTAINS;PASTES OR SOLIDS FOR COLOURING OR PRINTING;USE OF MATERIALS THEREFOR COATING METALLIC MATERIAL;COATING MATERIAL WITH METALLIC MATERIAL;SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE; BY CHEMICAL CONVERSION OR SUBSTITUTION;COATING BY VACUUM EVAPORATION; BY SPUTTERING; BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION; IN GENERAL OPTICAL ELEMENTS; SYSTEMS OR APPARATUS Reduction Of Greenhouse Gas [Ghg] Emissions; Related To Energy Generation; Transmission Or Distribution
Examiner	Tae-sik Kang
Extended Family	028-517-683-836-518 008-570-007-198-482 173-351-736-780-651 083-991-047-195-070 104-688-888-074-765 050-130-283-099-492 184-800-969-194-768 009-145-762-675-720 071-835-770-384-778 089-604-243-847-967 193-807-473-212-561 087-389-557-971-424
Patent ID	10283660
Inventor/Author	Gaud Vincent Louarn Mélanie Rouge Fabien
IPC	H01L31/048 C09D5/00 C09D7/62 C23C18/12 G02B1/11
Status	Active
Owner	Polyrise
Simple Family	028-517-683-836-518 008-570-007-198-482 173-351-736-780-651 083-991-047-195-070 104-688-888-074-765 050-130-283-099-492 184-800-969-194-768 009-145-762-675-720 071-835-770-384-778 089-604-243-847-967 193-807-473-212-561 087-389-557-971-424
CPC (with Group)	C09D5/006 C23C18/1254 C23C18/127 G02B1/11 Y02E10/50 C09D7/62 H10F19/80
Issuing Authority	United States Patent and Trademark Office (USPTO)
Kind	Patent/New European patent specification (amended specification after opposition procedure)